SMT850N high performance infrared top ir led SMT850N consists of an algaas led mounted on the lead frame as top led package and is 20mw typical of output power. it emits a spectral band of radiation at 850nm. outer dimension (unit: mm) specifications 1) product name top ir led 2) type no. SMT850N 3) chip (1) chip material algaas (2) chip dimension 0.4mm*0.4mm (3) peak wavelength 850nm typ. 4) package (1) lead frame die silver plated (2) package resin ppa resin (3) lens epoxy resin electro-optical characteristics [ta=25 c] item symbolmaximum ratedvalue unitambienttemperature power dissipation p d 160 mw ta=25 c forward current i f 100 ma ta=25 c pulse forward current i fp 1,000 ma ta=25 c reverse voltage v r 5 v ta=25 c operating temperature t opr -20 ~ +80 c storage temperature t stg -30 ~ +80 c soldering temperature t sol 240 c ? pulse forward current condition: duty=1% and pulse width=10us. ? soldering condition: soldering condition must be completed within 3 seconds at 230 c electro-optical characteristics [ta=25 c] item symbol condition minimum typical maximum unit i f =50ma dc 1.45 1.60 forward voltage v f i f =100ma, tp=20ms 1.50 1.8 v reverse current i r v r =5v 10 ua i f =50ma dc 15.0 20.0 total radiated power p o i f =100ma, tp=20ms 40.0 mw i f =50ma dc 10 radiant intensity i e i f =100ma, tp=20ms 20 mw/sr peak wavelength p i f =50ma dc 840 850 860 nm half width i f =50ma dc 40 nm viewing half angle i f =50ma dc 55 deg. rise time tr i f =50ma dc 15 ns fall time tf i f =50ma dc 10 ns ? total radiated power is measured by photodyne #500 ? radiant intensity is measured by tektronix j-6512. marubeni america corporation 3945 freedom circle, suite 1000, santa clara, ca 95054 408-330-0650 (ext. 323), 408-330-0655 (fax), sales@tech-led.com
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